FDS6690 Fairchild Semiconductor, FDS6690 Datasheet - Page 3

• Manufacturer Part Number: FDS6690
• Description: MOSFET Power USE 512-FDS6690A
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6690

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0125 Ohms
• Forward Transconductance Gfs (max / Min): 48 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 13 ns
• Lead Free Status / Rohs Status: No

Typical Electrical Characteristics
50
40
30
20
10
50
40
30
20
10
0
Figure 1. On-Region Characteristics.
0
2
1.8
1.6
1.4
1.2
0.8
0.6
0
Figure 3. On-Resistance Variation with
1
V = 10V
-50
GS
V
Figure 5 . Transfer Characteristics.
DS
V
I = 10 A
GS
D
= 5V
= 10 V
0.5
-25
6.0V
V
V
5.0V
GS
DS
Temperature.
, GATE TO SOURCE VOLTAGE (V)
4.5V
, DRAIN-SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
0
J
1
3
4.0V
25
1.5
50
T = -55°C
A
3.5V
2
75
4
25°C
100
2.5
125°C
125
3
5
150
0.0001
0.001
0.05
0.04
0.03
0.02
0.01
2.5
1.5
0.5
0.01
0.1
3
2
1
50
10
0
0
1
Figure 2. On-Resistance Variation with
2
Figure 4 . On Resistance Variation with
0
Figure 6 . Body Diode Forward Voltage
V
GS
V
Voltage.
GS
= 3.5V
= 0V
0.2
V
10
SD
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
4
Drain Current and Gate
T = 125°C
0.4
Variation with Source Current
Gate-to-Source Voltage.
, GATE TO SOURCE VOLTAGE (V)
A
I
D
and Temperature.
4.0V
, DRAIN CURRENT (A)
20
0.6
25°C
6
4.5V
-55°C
30
0.8
T = 125°C
A
T = 25°C
A
5.0V
5.5V
1
40
8
7.0V
10V
I = 5A
1.2
D
FDS6690 Rev.C
50
1.4
10