BSS295 Infineon Technologies, BSS295 Datasheet
BSS295
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SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • 0.8...2.0V GS(th) Type V DS BSS 295 50 V Type Ordering Code BSS 295 Q67000-S238 BSS 295 Q67000-S105 Maximum Ratings Parameter Drain source voltage ...
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Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage V = ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance 1 DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C A Inverse diode direct current,pulsed ˚C A Inverse diode forward voltage 2 ...
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Power dissipation tot A 1.2 W 1.0 P tot 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Safe operating area I = parameter : ...
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Typ. output characteristics parameter µ ˚ 3 tot 2.4 2.0 1.6 ...
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Drain-source on-resistance (on) j parameter 1 0.75 0.65 R 0.60 DS (on) 0.55 0.50 0.45 0.40 98% 0.35 typ 0.30 0.25 0.20 0.15 0.10 0.05 ...