TE28F800B3TA110 Intel, TE28F800B3TA110 Datasheet - Page 30

• Manufacturer Part Number: TE28F800B3TA110
• Manufacturer: Intel

Specifications of TE28F800B3TA110

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
30
Figure 9. x16 48-Ball VF BGA and µBGA* Chip Size Package (Top View, Ball Down)
NOTES:
1. A19, A20, and A21 indicate the upgrade address connections. Lower density devices will not have the upper
2.
address solder balls. Intel recommends that routing is not done in this area. A
the
16-Mbit device. A
device.
Table 8, “B3 Flash memory Device Signal Descriptions” on page 31
C
D
A
B
E
F
20
V
A13
A14
A15
A16
Vss
CCQ
1
is the upgrade address for the 32-Mbit device. A
D14
D15
A11
A10
A12
D7
2
WE#
D13
D5
D6
A8
A9
3
64M
RP#
D11
D12
A21
V
D4
4
PP
32M
WP#
A18
A20
V
D2
D3
5
CC
16M
D10
A19
A17
D8
D9
A6
6
21
details the usage of each device pin.
is the upgrade address for the 64-Mbit
CE#
A7
A5
A3
D0
D1
7
19
is the upgrade address for
OE#
Vss
A4
A2
A1
A0
8
Datasheet
0580_03