TE28F800B3TA110 Intel, TE28F800B3TA110 Datasheet - Page 32
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TE28F800B3TA110
Manufacturer Part Number
TE28F800B3TA110
Description
Manufacturer
Intel
Datasheet
1.TE28F800B3TA110.pdf
(70 pages)
Specifications of TE28F800B3TA110
Cell Type
NOR
Density
8Mb
Access Time (max)
110ns
Interface Type
Parallel
Boot Type
Top
Address Bus
19b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
512K
Supply Current
18mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TE28F800B3TA110
Manufacturer:
INTEL
Quantity:
1 871
Part Number:
TE28F800B3TA110
Manufacturer:
INTEL
Quantity:
20 000
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
32
Symbol
Table 8.
GND
V
NC
PP
B3 Flash memory Device Signal Descriptions (Sheet 2 of 2)
Power
Type
—
—
PROGRAM/ERASE Power Supply: Supplies power for Program and Erase operations. V
be the same as V
manufacturing, 11.4 V to 12.6 V can be supplied to V
11.4 V to 12.6 V to V
2500 cycles on the parameter blocks. V
maximum (see
V
commands.
Ground: For all internal circuitry. All ground inputs must be connected.
No Connect: Pin can be driven or left floating.
PP
< V
PPLK
protects memory contents against inadvertent or unintended program and erase
Section 13.0, “V
CC
(2.7 V to 3.6 V) for single supply voltage operation. For fast programming at
PP
can only be done for a maximum of 1000 cycles on the main blocks and
PP
Program and Erase Voltages” on page 62
PP
Description
can be connected to 12 V for a total of 80 hours
PP
. This pin cannot be left floating. Applying
for details).
Datasheet
PP
can