TE28F800B3TA110 Intel, TE28F800B3TA110 Datasheet - Page 7
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TE28F800B3TA110
Manufacturer Part Number
TE28F800B3TA110
Description
Manufacturer
Intel
Datasheet
1.TE28F800B3TA110.pdf
(70 pages)
Specifications of TE28F800B3TA110
Cell Type
NOR
Density
8Mb
Access Time (max)
110ns
Interface Type
Parallel
Boot Type
Top
Address Bus
19b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
512K
Supply Current
18mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TE28F800B3TA110
Manufacturer:
INTEL
Quantity:
1 871
Part Number:
TE28F800B3TA110
Manufacturer:
INTEL
Quantity:
20 000
1.0
1.1
1.2
Datasheet
Introduction
This datasheet describes the specifications for the Intel
device (hereafter referred to as the B3 flash memory device). It is optimized for portable, low-
power, systems. This family of products features 1.65 V to 2.5 V or 2.7 V to 3.6 V I/Os, and a low
V
is capable of fast programming at 12 V. Throughout this document, the term “2.7 V” refers to the
full voltage range 2.7 V to 3.6 V (except where noted otherwise) and “V
±5%.
Nomenclature
0x
0b
Byte
Word
KW or Kword 1024 words
Mword
Kb
KB
Mb
MB
APS
CSP
CUI
OTP
PR
PRD
PLR
RFU
SR
SRD
WSM
Conventions
The terms pin and signal are often used interchangeably to refer to the external signal connections
on the package; for chip scale package (CSP) the term ball is used.
Group Membership Brackets: Square brackets will be used to designate group membership or to
define a group of signals with similar function (i.e. A[21:1], SR[4:1])
Set: When referring to registers, the term set means the bit is a logical 1.
Clear: When referring to registers, the term clear means the bit is a logical 0.
Block: A group of bits (or words) that erase simultaneously with one block erase instruction.
Main Block: A block that contains 32 Kwords.
Parameter Block: A block that contains 4 Kwords.
CC
/V
PP
operating range of 2.7 V to 3.6 V for Read, Program, and Erase operations. In addition, it
Hexadecimal prefix
Binary prefix
8 bits
16 bits
1,048,576 words
1024 bits
1024 bytes
1,048,576 bits
1,048,576 bytes
Automatic Power Savings
Chip Scale Package
Command User Interface
One Time Programmable
Protection Register
Protection Register Data
Protection Lock Register
Reserved for Future Use
Status Register
Status Register Data
Write State Machine
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Advanced Boot Block Flash Memory (B3)
PP
= 12 V” refers to 12 V
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