MT48LC8M16A2P-6A Micron Technology Inc, MT48LC8M16A2P-6A Datasheet - Page 31
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MT48LC8M16A2P-6A
Manufacturer Part Number
MT48LC8M16A2P-6A
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48LC8M16A2P-6A.pdf
(74 pages)
Specifications of MT48LC8M16A2P-6A
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
5.4ns
Maximum Clock Rate
167MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
165mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48LC8M16A2P-6A
Manufacturer:
MT
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NXP
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Figure 18:
WRITEs
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. N 1/09 EN
Terminating a READ Burst
Notes:
COMMAND
COMMAND
1. DQM is LOW.
WRITE bursts are initiated with a WRITE command, as shown in Figure 19 on page 32.
auto precharge either is enabled or disabled for that access. If auto precharge is enabled,
the row being accessed is precharged at the completion of the burst. For the generic
WRITE commands used in the following illustrations, auto precharge is disabled.
During WRITE bursts, the first valid data-in element will be registered coincident with
the WRITE command. Subsequent data elements will be registered on each successive
positive clock edge. Upon completion of a fixed-length burst, assuming no other
commands have been initiated, the DQ will remain High-Z and any additional input
data will be ignored (see Figure 20 on page 32). A full-page burst will continue until
terminated. (At the end of the page, it will wrap to column 0 and continue.)
The starting column and bank addresses are provided with the WRITE command, and
ADDRESS
ADDRESS
CLK
CLK
DQ
DQ
BANK,
T0
COL n
T0
BANK,
COL n
READ
READ
CL = 2
T1
T1
NOP
NOP
CL = 3
31
T2
T2
NOP
NOP
D
OUT
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3
T3
NOP
NOP
n + 1
D
D
OUT
OUT
n
TRANSITIONING DATA
TERMIN ATE
TERMIN ATE
T4
BURST
BURST
T4
X = 1 cycle
n + 2
D
n + 1
D
OUT
OUT
128Mb: x4, x8, x16 SDRAM
X = 2 cycles
T5
T5
NOP
NOP
n + 3
n + 2
D
D
OUT
OUT
©1999 Micron Technology, Inc. All rights reserved.
T6
T6
NOP
NOP
n + 3
D
OUT
DON’T CARE
Operations
T7
NOP