FDS6692 Fairchild Semiconductor, FDS6692 Datasheet
FDS6692
Manufacturer Part Number
FDS6692
Description
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet
1.FDS6692.pdf
(4 pages)
Specifications of FDS6692
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.012Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±16V
Continuous Drain Current
12A
Power Dissipation
2.5W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6692
Manufacturer:
FAIRCHILD
Quantity:
2 350
Part Number:
FDS6692
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6692-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6692-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6692A
Manufacturer:
FSC
Quantity:
5 000
Company:
Part Number:
FDS6692A
Manufacturer:
FAIRCHAILD
Quantity:
565
Part Number:
FDS6692A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS6692
30V N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JA
JC
DC/DC converter
Device Marking
STG
N-Channel
FDS6692
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
MOSFET
SO-8
DS(ON)
D
D
and fast switching speed.
– Continuous
– Pulsed
has
S
FDS6692
Device
Parameter
S
been
S
G
designed
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
12 A, 30 V.
High performance trench technology for extremely
low R
Low gate charge (18 nC typical)
High power and current handling capability
DS(ON)
5
6
7
8
Tape width
R
R
DS(ON)
DS(ON)
12mm
-55 to +175
Ratings
125
2.5
1.2
1.0
30
12
50
50
25
16
= 12 m
= 14.5 m @ V
September 2003
@ V
4
3
2
1
GS
GS
= 10 V.
2500 units
FDS6692 Rev D (W)
Quantity
= 4.5 V
Units
C/W
C/W
C/W
W
V
V
A
C
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Datasheet:
FDS6692 Summary of contents
Page 1
... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1c) (Note 1) Reel Size 13’’ September 2003 DS(ON 14 4.5 V DS(ON Ratings Units 2.5 W 1.2 1.0 C -55 to +175 C/W 50 C/W 125 C/W 25 Tape width Quantity 12mm 2500 units FDS6692 Rev D (W) ...
Page 2
... S is determined by the user's board design 105°C/W when 2 2 mounted on a .04 in pad copper Min Typ Max Units 100 nA –100 mV/ C –5 9 11.5 14 2164 pF 357 pF 138 2.1 A 0.7 1 125°C/W when mounted on a minimum pad. FDS6692 Rev D (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V GS 3.5V 4.5V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6692 Rev D ( 1.2 ...
Page 4
... Figure 8. Capacitance Characteristics. 50 100µs 40 1ms 10ms 0.001 0.01 10 100 Figure 10. Single Pulse Maximum 0.01 0 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 125 °C/W JA P(pk ( Duty Cycle 100 FDS6692 Rev D ( 1000 ...