IPD09N03LA Infineon Technologies, IPD09N03LA Datasheet
IPD09N03LA
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IPD09N03LA Summary of contents
Page 1
... Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA (SMD version) 8.6 mΩ IPU09N03LA P-TO251-3-21 09N03LA Value Unit 350 kV/µs ± -55 ... 175 °C 55/175/56 2008-04-14 ...
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... A DS( SMD version SMD version |>2 DS(on)max = =2.4 K/W the chip is able to carry 67 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G Values Unit min. typ. max 2.4 K 1.2 1 0.1 1 µ 100 - 10 100 mΩ ...
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... DD GS =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G Values Unit min. typ. max. - 1235 1642 pF - 474 630 - 7 5.6 8 3.4 5.1 - 4.3 5 2.0 2.6 - 2.8 4.3 - 5 350 - 0.97 1 2008-04-14 ...
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... Rev. 2.12 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0. 100 10 [V] DS page 4 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 ...
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... V 7 Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 2.12 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f ° [V] GS page 5 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA =25 ° 4.1 V 3.5 V 3.8 V 3 [A] D =25 ° [ 2008-04-14 ...
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... Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 10 Crss 0.0 [V] DS page 6 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA 200 µA 20 µA - 100 140 T [° 175 °C, 98% 175 °C 25 °C, 98% 0.5 1.0 1.5 V [V] SD 180 25 °C 2 ...
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... Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 2.12 14 Typ. gate charge V =f(Q GS parameter ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA =25 A pulsed gate [nC] gate ate 2008-04-14 ...
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... Package Outline Rev. 2.12 IPD09N03LA G IPS09N03LA G PG-TO252-3-11 page 8 IPF09N03LA G IPU09N03LA G 2008-04-14 ...
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... Package Outline PG-TO252-3-23: Outline Footprint: Rev. 2.12 IPD09N03LA G IPS09N03LA G PG-TO252-3-23 page 9 IPF09N03LA G IPU09N03LA G 2008-04-14 ...
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... Package Outline Rev. 2.12 IPD09N03LA G IPS09N03LA G PG-TO251-3-11 page 10 IPF09N03LA G IPU09N03LA G 2008-04-14 ...
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... Package Outline Rev. 2.12 IPD09N03LA G IPS09N03LA G PG-TO251-3-21 page 11 IPF09N03LA G IPU09N03LA G 2008-04-14 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.12 IPD09N03LA G IPS09N03LA G page 12 IPF09N03LA G IPU09N03LA G ...