FDQ7238S Fairchild Semiconductor, FDQ7238S Datasheet

FDQ7238S

Manufacturer Part Number
FDQ7238S
Description
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of FDQ7238S

Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-volt
30V
Gate-source Voltage (max)
±16V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Package Type
SOIC N
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDQ7238S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDQ7238S
Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package
General Description
The FDQ7238S is designed to replace two single SO-8
MOSFETs in DC to DC power supplies. The high-side
switch (Q1) is designed with specific emphasis on
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET
© 2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
Symbol
D
J
DSS
GSS
D
θ JA
, T
SO-14
Device Marking
STG
FDQ7238S
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
pin 1
TM
technology.
Vin
- Continuous
- Pulsed
FDQ7238S
Device
G1
Parameter
G2
S2
T
S2
A
= 25° C unless otherwise noted
S2
Reel Size
(Note 1a & 1b)
(Note 1c & 1d)
(Note 1c & 1d)
(Note 1a & 1b)
13”
(Note 1a)
Features
Q2: 14 A, 30V. R
Q1: 11 A, 30V. R
Q2
±16
2.4
1.3
30
14
50
52
94
Tape width
16mm
−55 to +150
R
R
DS(on)
DS(on)
DS(on)
DS(on)
= 9.5 mΩ @ V
= 10.5 mΩ @ V
= 14.5 mΩ @ V
= 16 mΩ @ V
September 2003
Q1
±16
118
1.8
1.1
30
11
50
68
FDQ7238S Rev A1 (W)
2500 units
Quantity
GS
GS
GS
GS
= 4.5V
Units
= 10V
°C/W
= 4.5V
= 10V
°C
W
V
V
A

Related parts for FDQ7238S

FDQ7238S Summary of contents

Page 1

... FDQ7238S Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package General Description The FDQ7238S is designed to replace two single SO-8 MOSFETs power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using TM Fairchild’ ...

Page 2

... 4 11 125° 1.0 MHz mVf = 1.0 MHz 10V Ω GEN 14A 11A mV/°C 25 µA 500 1 100 nA 100 −100 nA −100 1 1 1.4 3 −3 mV/°C −5 7 9.5 mΩ 2872 pF 1906 522 pF 311 186 pF 134 Ω 1.5 0 FDQ7238S Rev A1 (W) ...

Page 3

... C/W when 2 mounted on a 1in pad copper (Q2). Type Min Typ Max Units 2.1 Q2 0.44 0.7 V 0.37 Q1 0.7 1 118° C/W when mounted on a minimum pad copper (Q1). d) 94° C/W when mounted on a minimum pad copper (Q2). FDQ7238S Rev A1 (W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.5V GS 3.0V 3.5V 4.5V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDQ7238S Rev A1 ( 0.8 ...

Page 5

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE C/W θ 0 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ C/W θ θJA Duty Cycle 100 FDQ7238S Rev A1 (W) 30 1000 1000 ...

Page 6

... Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDQ7238S Q2. TIME : 12nS/div Figure 12. FDQ7238S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET(FDS6644) ...

Page 7

... Figure 20. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.0V 3.5V 4.5V 6.0V 10V DRAIN CURRENT ( 5. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDQ7238S Rev A1 ( 1.2 ...

Page 8

... Figure 24. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 118° C/W θ 25° 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 118 C/W θJA P(pk (t) θ Duty Cycle 100 FDQ7238S Rev A1 (W) 30 1000 1000 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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