TDK5110XT Infineon Technologies, TDK5110XT Datasheet - Page 31
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TDK5110XT
Manufacturer Part Number
TDK5110XT
Description
Manufacturer
Infineon Technologies
Datasheet
1.TDK5110XT.pdf
(41 pages)
Specifications of TDK5110XT
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Product Depth (mm)
4.4mm
Operating Supply Voltage (min)
2.1V
Operating Supply Voltage (typ)
2.5/3.3V
Lead Free Status / Rohs Status
Compliant
Wireless Components
The output power P
characterised by R
The power efficiency (and the bandwidth) increase when operating at a slightly
higher R
The collector efficiency E is defined as
The diagram of Figure 4-9 was measured directly at the PA-output at V
Losses in the matching circuitry decrease the output power by about 1.5 dB. As
can be seen from the diagram, 250
at 3 V. For an approximation of R
two formulas can be used:
and
Figure 4-9
The DC collector current I
vary with the load resistor R
amplifiers. The collector current will show a characteristic dip at the resonance
frequency for this type of “overcritical” operation. The depth of this dip will
increase with higher values of R
E
P
R
V
OUT
OPT
P
S
O
I
L
C
, as shown in Figure 4-9.
~
~
R
18
16
14
12
10
V
8
6
4
2
0
Output power P
OPT
0
S
L
> R
100
o
4 - 11
LC
is reduced by operating in an “overcritical” mode
c
.
o
of the power amplifier and the RF output power P
L
(mW) and collector efficiency E vs. load resistor R
. This is typical for overcritical operation of class C
200
RL [Ohm]
L
.
OPT
300
and P
is the optimum impedance for operation
OUT
400
at other supply voltages those
500
Specification, October 2002
Pout [mW]
10*Ec
Applications
TDK 5110
Power_E_vs_RL.wmf
S
= 3 V.
L
.
o