MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 39

• Manufacturer Part Number: MT29F4G08ABBDAH4:D
• Description: MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
• Manufacturer: Micron Technology Inc

READ PARAMETER PAGE (ECh)
Figure 28: READ PARAMETER (ECh) Operation
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
Cycle type
I/O[7:0]
R/B#
Command
ECh
The READ PARAMETER PAGE (ECh) command is used to read the ONFI parameter page
programmed into the target. This command is accepted by the target only when all die
(LUNs) on the target are idle.
Writing ECh to the command register puts the target in read parameter page mode. The
target stays in this mode until another valid command is issued.
When the ECh command is followed by an 00h address cycle, the target goes busy for
If the READ STATUS (70h) command is used to monitor for command completion, the
READ MODE (00h) command must be used to re-enable data output mode. Use of the
READ STATUS ENHANCED (78h) command is prohibited while the target is busy and
during data output.
A minimum of three copies of the parameter page are stored in the device. Each param-
eter page is 256 bytes. If desired, the RANDOM DATA READ (05h-E0h) command can be
used to change the location of data output.
Address
00h
t WB
t R
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
t RR
39
D
P0
OUT
0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
P1
OUT
0
READ PARAMETER PAGE (ECh)
D
…
OUT
D
P0
OUT
1
© 2009 Micron Technology, Inc. All rights reserved.
D
P1
OUT
1
D
…
OUT
t
R.