MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 82

• Manufacturer Part Number: MT29F4G08ABBDAH4:D
• Description: MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
• Manufacturer: Micron Technology Inc

Figure 55: PROGRAM FOR INTERNAL DATA MOVE (85h-10h) with RANDOM DATA INPUT (85h)
PROGRAM FOR INTERNAL DATA MOVE TWO-PLANE (85h-11h)
Figure 56: PROGRAM FOR INTERNAL DATA MOVE TWO-PLANE (85h-11h) Operation
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
Cycle type
I/O[7:0]
RDY
Cycle type
Cycle type
Command
I/O[7:0]
I/O[7:0]
85h
RDY
RDY
Address
1
C1
Command
Command
85h
85h
The PROGRAM FOR INTERNAL DATA MOVE TWO-PLANE (85h-11h) command is func-
tionally identical to the PROGRAM PAGE TWO-PLANE (85h-11h) command, except that
when 85h is written to the command register, cache register contents are not cleared.
See Program Operations for further details.
Address
C2
Address
Address
C1
C1
Address
R1
Address
Address
C2
Address
C2
R2
t
Address
WHR
Address
R1
R3
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
82
t ADL
Address
R2
D
Dj
IN
D
D0
IN
Dj + 1
Address
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
IN
R3
D
…
IN
Internal Data Move Operations
Dj + 2
t
D
WHR
IN
D
Dn
IN
Command
10h
Command
D
t WB
Di
11h
IN
t WB t DBSY
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Di + 1
D
t PROG
IN
Command
1
85h
Address
...