H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 47

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
7.5.2 ODT DC Electrical Characteristics
A below table provides an overview of the ODT DC electrical characteristics. The values for RTT60Pd120, RTT60Pu120,
RTT120Pd240, RTT120Pu240, RTT40Pd80, RTT40Pu80, RTT30Pd60, RTT30Pu60, RTT20Pd40, RTT20Pu40 are not specifi-
cation requirements, but can be used as design guide lines:
ODT DC Electrical Characteristics, assuming R
after proper ZQ calibration
MR1 A9, A6, A2
0, 1, 0
0, 0, 1
120 Ω
60 Ω
RTT
RTT
RTT
RTT
RTT
Resistor
RTT
RTT
120Pd240
120Pu240
60Pd120
60Pu120
120
60
V
V
ZQ
IL(ac)
IL(ac)
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
0.2 × V
0.5 × V
0.8 × V
V
V
V
V
= 240 Ω +/- 1% entire operating temperature range;
V
V
V
V
V
OHdc
OHdc
OHdc
OHdc
OLdc
OLdc
OLdc
OLdc
to V
to V
Out
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
IH(ac)
IH(ac)
min
0.6
0.9
0.9
0.9
0.9
0.6
0.9
0.6
0.9
0.9
0.9
0.9
0.6
0.9
nom
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
1.00
max
1.1
1.1
1.4
1.4
1.1
1.1
1.6
1.1
1.1
1.4
1.4
1.1
1.1
1.6
R
R
R
R
R
R
R
R
Unit
R
R
R
R
R
R
H5TQ2G63BFR
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
ZQ
/2
/2
/2
/2
/2
/2
/2
/4
1) 2) 3) 4)
1) 2) 3) 4)
1) 2) 3) 4)
1) 2) 3) 4)
1) 2) 3) 4)
1) 2) 3) 4)
1) 2) 3) 4)
1) 2) 3) 4)
1) 2) 3) 4)
1) 2) 3) 4)
1) 2) 3) 4)
1) 2) 3) 4)
1) 2) 5)
1) 2) 5)
Notes
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