H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 63
H5TQ2G63BFR-H9C
Manufacturer Part Number
H5TQ2G63BFR-H9C
Description
58T1898
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet
1.H5TQ2G63BFR-H9C.pdf
(93 pages)
Specifications of H5TQ2G63BFR-H9C
Memory Type
SDRAM
Memory Configuration
128M X 16
Access Time
13.5ns
Interface Type
CMOS
Memory Case Style
FBGA
No. Of Pins
96
Operating Temperature Range
0°C To +85°C
Memory Size
2 Gbit
Rohs Compliant
Yes
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Rev. 0.5 / Aug. 2010
Table 9 - IDD5B Measurement-Loop Pattern
a) DM must be driven LOW all the time. DQS, DQS are FLOATING.
b) DQ signals are FLOATING.
0
1
2
0
1.2
3,4
5...8
9...12
13...16
17...20
21...24
25...28
29...32
33...nRFC-1
repeat cycles 1...4, but BA[2:0] = 1
repeat cycles 1...4, but BA[2:0] = 2
repeat cycles 1...4, but BA[2:0] = 3
repeat cycles 1...4, but BA[2:0] = 4
repeat cycles 1...4, but BA[2:0] = 5
repeat cycles 1...4, but BA[2:0] = 6
repeat cycles 1...4, but BA[2:0] = 7
repeat Sub-Loop 1, until nRFC - 1. Truncate, if necessary.
REF
D, D
D, D
0
1
1
a)
0
0
1
0
0
1
1
0
1
0
0
0
0
0
0
00
00
0
0
0
0
0
0
0
0
0
F
H5TQ2G63BFR
0
0
0
Data
-
-
-
b)
63