H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 82

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
Table 13 - Derating values tIS/tIH - ac/dc based
Table 14 - Required time t
CMD
Slew
ADD
V/ns
rate
/
Slew Rate
[V/ns]
> 2.0
< 0.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Alternate AC150 Threshold -> VIH (ac) = VREF (dc) + 150mV, VIL (ac) = VREF (dc) - 150mV
ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS
-10
-25
75
50
4.0 V/ns
-1
0
0
0
0
-10
-16
-26
-40
-60
50
34
-4
0
-10
-25
75
50
3.0 V/ns
-1
VAC
min
0
0
0
0
75
57
50
38
34
29
22
13
0
0
above VIH (ac) {below VIL (ac)} for valid transition
t
VAC
-10
-16
-26
-40
-60
50
34
-4
0
@ 175 mV [ps]
ΔtIS, ΔtIH derating in [ps] AC/DC based
-10
-25
75
50
-1
2.0 V/ns
0
0
0
0
ΔtIH
-10
-16
-26
-40
-60
50
34
-4
0
CK,CK Differential Slew Rate
max
ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH ΔtIS ΔtIH
-17
83
58
-
-
-
-
-
-
-
-
-
-
1.8 V/ns
-2
8
8
8
8
7
-18
-32
-52
58
42
-2
-8
8
4
91
66
16
16
16
16
15
1.6 V/ns
-9
6
-10
-24
-44
66
50
16
12
6
0
min
175
170
167
163
162
161
159
155
150
150
99
74
24
24
24
24
23
14
1.4 V/ns
-1
t
VAC
-16
-36
74
58
24
20
14
-2
@ 150 mV [ps]
8
107
32
32
32
31
22
82
32
1.2 V/ns
7
H5TQ2G63BFR
-26
84
68
34
30
24
18
-6
8
max
-
-
-
-
-
-
-
-
-
-
115
90
40
40
40
40
39
30
15
1.0 V/ns
100
-10
84
50
46
40
34
24
10
82