TC58NVG1S3ETA00 Toshiba, TC58NVG1S3ETA00 Datasheet - Page 60

• Manufacturer Part Number: TC58NVG1S3ETA00
• Manufacturer: Toshiba

Specifications of TC58NVG1S3ETA00

• Cell Type: NAND
• Density: 2Gb
• Access Time (max): 30us
• Interface Type: Serial
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Supplier Unconfirmed

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Bad Block Test Flow
*1:
Regarding invalid blocks, bad block mark is in either the 1st or the 2nd page.
Invalid blocks (bad blocks)
Block No. = Block No. + 1
The device occasionally contains unusable blocks. Therefore, the following issues must be recognized:
No erase operation is allowed to detected bad blocks
No
Bad Block
Bad Block
Block No = 1
Read Check
Last Block
impossible to recover the bad block information if the information is
erased.
Refer to the test flow for bad block detection. Bad blocks which are
detected by the test flow must be managed as unusable blocks by the
system.
isolated from the bit lines by select gates.
The number of valid blocks over the device lifetime is as follows:
Valid (Good) Block Number
Start
End
Please do not perform an erase operation to bad blocks. It may be
Check if the device has any bad blocks after installation into the system.
A bad block does not affect the performance of good blocks because it is
Pass
Yes
60
Read Check :
Read either column 0 or 2048 of the 1st page or the
2nd page of each block. If the data of the column is not
FF (Hex), define the block as a bad block.
Fail
Bad Block * 1
2008
MIN
TYP.
⎯
TC58NVG1S3ETA00
2048
MAX
2010-05-21C
Block
UNIT