BF517E6327XT Infineon Technologies, BF517E6327XT Datasheet - Page 2
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BF517E6327XT
Manufacturer Part Number
BF517E6327XT
Description
Manufacturer
Infineon Technologies
Datasheet
1.BF517E6327XT.pdf
(7 pages)
Specifications of BF517E6327XT
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
20V
Emitter-base Voltage
2.5V
Collector Current (dc) (max)
25mA
Dc Current Gain (min)
40
Power Dissipation
280mW
Frequency (max)
2.5GHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / Rohs Status
Compliant
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain-
I
I
Collector-emitter saturation voltage
I
C
C
C
C
CB
CB
EB
= 1 mA, I
= 2 mA, V
= 25 mA, V
= 10 mA, I
= 2.5 V, I
= 10 V, I
= 25 V, I
B
CE
B
E
E
= 0
C
CE
= 1 mA
= 0
= 0
= 0
= 1 V, pulse measured
= 1 V, pulse measured
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
h
V
CBO
EBO
FE
(BR)CEO
CEsat
min.
15
40
20
-
-
-
-
Values
typ.
0.1
70
-
-
-
-
-
max.
0.05
150
100
0.4
10
-
2007-04-20
-
BF517
Unit
V
µA
-
V