BG3123H6327XT Infineon Technologies, BG3123H6327XT Datasheet - Page 4

no-image

BG3123H6327XT

Manufacturer Part Number
BG3123H6327XT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BG3123H6327XT

Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.025A
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
32@5V@Amp A/30@5V@Amp BdB
Noise Figure (max)
1.8(Typ)dB
Package Type
SOT-363
Pin Count
6
Forward Transconductance (typ)
0.3S
Input Capacitance (typ)@vds
1.9@5V@Gate 1@Amp A/1.5@5V@Gate 1@Amp BpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Lead Free Status / Rohs Status
Compliant
Electrical Characteristics at T
Parameter
AC Characteristics V
Forward transconductance
amp. A
amp. B
Gate1 input capacitance
f = 10 MHz, amp. A
f = 10 MHz, amp. B
Output capacitance
f = 10 MHz, amp. A
f = 10 MHz, amp. B
Power gain
f = 800 MHz, amp. A
f = 800 MHz, amp. B
f = 45 MHz, amp. A
f = 45 MHz, amp. B
Noise figure
f = 800 MHz, amp. A
f = 800 MHz, amp. B
f = 45 MHz, amp. A
f = 45 MHz, amp. B
Gain control range
V
Cross-modulation k=1%, f
amp.A , AGC = 0 dB
amp. B, AGC = 0 dB
amp. A , AGC = 10 dB
amp. B , AGC = 10 dB
amp. A, AGC = 40 dB
amp. B, AGC = 40 dB
G2S
= 4 ... 0 V , f = 800 MHz
DS
= 5V, V
w
=50MHz, f
A
G2S
= 25°C, unless otherwise specified
= 4V, (I
unw
=60MHz
D
= 14 mA) (verified by random sampling)
4
Symbol
g
C
C
G
F
X
fs
G
mod
g1ss
dss
p
p
min.
45
90
90
98
98
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
103
104
typ.
1.9
1.5
1.3
1.1
1.8
1.8
1.4
1.6
30
25
25
24
32
30
96
97
91
94
-
max.
BG3123...
2007-04-26
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
mS
pF
dB
dB
-

Related parts for BG3123H6327XT