BFP420H6327XT Infineon Technologies, BFP420H6327XT Datasheet - Page 7

• Manufacturer Part Number: BFP420H6327XT
• Manufacturer: Infineon Technologies

Specifications of BFP420H6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 4.5V
• Collector-base Voltage: 15V
• Emitter-base Voltage: 1.5V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 60
• Power Dissipation: 160mW
• Frequency (max): 25GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-343
• Lead Free Status / Rohs Status: Compliant

Transition frequency f
f = 2 GHz
V
Power gain G
V
f = parameter in GHz
CE
CE
GHz
dB
= parameter in V
= 2V
30
24
22
20
18
16
14
12
10
30
24
22
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
4
5
8
ma
10
12
, G
15
ms
16
=
T
20
20
= ( I
24
( I
25
C
C
)
)
28
30
32 mA
2 to 4
mA
I
I
C
C
1.5
1
0.75
0.5
0.9
1.8
2.4
3
4
5
6
40
40
7
Power gain G
V
Power gain G
I
f = parameter in GHz
C
CE
= 20 mA
dB
44
40
36
32
28
24
20
16
12
= 2 V, I
8
4
0
30
24
22
20
18
16
14
12
10
0
8
6
4
2
0
0
0.5
1
C
|S
G
21
= 20 mA
ms
ma
|
ma
1
2
, G
, G
2
1.5
ms
ms
f [GHz]
2
, | S
3
=
2.5
21
( V
|² =
4
CE
3
2007-04-20
G
ma
)
3.5
( f )
BFP420
5
V
V
CE
0.9
1.8
2.4
3
4
5
6
6
4.5