MJD350 Fairchild Semiconductor, MJD350 Datasheet
MJD350
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MJD350 Summary of contents
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... Electrical Characteristics Symbol Parameter V (sus) * Collector-Emitter Sustaining Voltage CEO I Collector Cut-off Current CEO I Emitter Cut-off Current EBO Current Gain FE * Pulse Test: PW 300 s, Duty Cycle 2% ©2001 Fairchild Semiconductor Corporation MJD350 1 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 1mA ...
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... Typical Characteristics 1000 100 -10 I [A], COLLECTOR CURRENT C Figure 1. DC current Gain -1000 I (max (max) C -100 -10 -1 -10 -100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 3. Safe Operating Area ©2001 Fairchild Semiconductor Corporation - -10V CE -1 -0.1 -0.01 -1 -100 -1000 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1000 ...
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... Package Demensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2001 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...