FDS9936 Fairchild Semiconductor, FDS9936 Datasheet

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FDS9936

Manufacturer Part Number
FDS9936
Description
FDS9936Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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© 1998 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
FDS9936A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Absolute Maximum Ratings
J
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These devices
are particularly suited for low voltage applications such as disk
drive motor control, battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
DSS
GSS
D
,T
JA
JC
STG
SOT-23
D1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
SO-8
D1
D2
D2
- Pulsed
SuperSOT
pin 1
S1
TM
-6
G1
T
A
= 25
S2
o
C unless other wise noted
G2
SuperSOT
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1a)
(Note 1)
(Note 1a)
TM
-8
Features
SO-8
5.5 A, 30 V. R
High density cell design for extremely low R
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package
6
5
7
8
R
FDS9936A
DS(ON)
-55 to 150
DS(ON)
±20
5.5
1.6
0.9
30
78
40
20
2
1
SOT-223
= 0.040
= 0.060
@ V
@ V
GS
GS
= 10 V,
1
4
= 4.5 V.
3
2
SOIC-16
May 1998
DS(ON)
FDS9936A Rev.B
.
Units
°C/W
°C/W
°C
W
V
V
A

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FDS9936 Summary of contents

Page 1

... Dual MOSFET in surface mount package TM SO-8 SuperSOT - unless other wise noted (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) May 1998 = 0.040 @ DS(ON 0.060 @ V = 4.5 V. DS(ON DS(ON) SOIC-16 SOT-223 FDS9936A Units 30 ±20 5 1.6 1 0.9 -55 to 150 78 °C/W 40 °C/W FDS9936A Rev °C ...

Page 2

... C 0.03 0.04 T =125°C 0.046 0.068 J 0.045 0. 350 220 80 7 2.1 2.6 1.3 0.76 1.2 (Note 135 C 0.003 in 2 pad of 2oz copper. Units V o mV/ C µA µ mV guaranteed by 2 FDS9936A Rev.B ...

Page 3

... I , DRAIN CURRENT ( 125°C J 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDS9936A Rev 1.2 ...

Page 4

... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135° C 25°C A 0.1 0 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 30 300 300 FDS9936A Rev.B ...

Page 5

SO-8 Tape and Reel Data and Package Dimensions SOIC(8lds) Packaging Configuration: Figure 1 SHI P OR STO RE N EAR ECT ROST ECT RO M AGN ETI ...

Page 6

... SOIC(8lds) Reel Configuration: Figure 4.0 Dim A max 13" Diameter Option Reel Tape Size Dim A Dim B Option 7.00 0.059 12mm 7" Dia 177.8 1.5 13.00 0.059 12mm 13" Dia 330 1.5 1998 Fairchild Semiconductor Corporation User Direction of Feed Dimensions are in millimeter 1.55 1.60 1.75 10.25 5.50 8.0 +/-0.05 +/-0 ...

Page 7

SO-8 Tape and Reel Data and Package Dimensions, continued SOIC-8 (FS PKG Code S1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 September 1998, Rev. ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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