BUZ50B Infineon Technologies AG, BUZ50B Datasheet
BUZ50B
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BUZ50B Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode V Type DS BUZ 50 B 1000 V Maximum Ratings Parameter Drain source voltage Drain-gate voltage Continuous drain current °C C Pulsed ...
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Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
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Power dissipation tot tot Safe operating area parameter 0.01 , ...
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Typ. output characteristics parameter µ 78W tot 3.5 D 3.0 2.5 2.0 1.5 1.0 0.5 0 ...
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Drain-source on-resistance (on) j parameter 1 (on 98% 12 typ -60 - ...
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Drain-source breakdown voltage (BR)DSS j 1200 V 1160 V 1140 (BR)DSS 1120 1100 1080 1060 1040 1020 1000 980 960 940 920 900 -60 - Semiconductor Group Typ. gate charge ...
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Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 BUZ 50 B 07/96 ...