HYB5118165BSJ-50 Infineon Technologies AG, HYB5118165BSJ-50 Datasheet
HYB5118165BSJ-50
Available stocks
Related parts for HYB5118165BSJ-50
HYB5118165BSJ-50 Summary of contents
Page 1
Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) Advanced Information • 1 048 576 words by 16-bit organization • operating temperature • Hyper Page Mode-EDO-operation • Performance: t RAS access time RAC t CAS access ...
Page 2
The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 1 048 576 words by 16-bits. The HYB 5(3)118165 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit ...
Page 3
Pin Names and Configuration Row Address Inputs Column Address Inputs Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Output Enable Data Input/Output Read/Write Input Power Supply Ground (0 V) Not Connected P-SOJ-42-1 (400 mil ...
Page 4
WE & UCAS LCAS No.2 Clock Generator Column 10 Address Buffers (10 Refresh A2 Controller Refresh A6 Counter (10 Row 10 Address Buffers (10) No.1 Clock RAS Generator Block Diagram for HYB ...
Page 5
Absolute Maximum Ratings Operating temperature range ........................................................................................... Storage temperature range........................................................................................ – 150 C Input/output voltage (5 V versions) .................................................... – 0.5 to min ( Input/output voltage (3.3 V versions) ................................................. – 0.5 to min ...
Page 6
DC Characteristics (cont’ Parameter Common Parameters Input leakage current ( 0.3 V, all other pins = Output leakage ...
Page 7
Capacitance MHz A Parameter Input capacitance (A0 to A11) Input capacitance (RAS, UCAS, LCAS, WE, OE) I/O capacitance (I/O1 - I/O16 Characteristics ...
Page 8
AC Characteristics (cont’ Parameter Column address to RAS lead time Read command setup time Read command hold time Read command hold time referenced to RAS ...
Page 9
AC Characteristics (cont’ Parameter Access time from CAS precharge Output data hold time RAS pulse width in EDO mode CAS precharge to RAS delay OE ...
Page 10
Notes 1. All voltages are referenced and depend on cycle rate. CC1 CC3 CC4 CC6 and depend on output loading. Specified values are obtained with the output open. CC1 ...
Page 11
V IH RAS UCAS LCAS ASR V IH Address Row I/O (Inputs I/O (Outputs) V ...
Page 12
V IH RAS UCAS LCAS ASR V IH Address Row RAH I/O (Inputs I/O ...
Page 13
V IH RAS UCAS LCAS ASR V IH Address Row RAH I/O (Inputs I/O ...
Page 14
V IH RAS UCAS LCAS ASR V IH Address Row I/O (Inputs I/O (Outputs) ...
Page 15
RCD V IH RAS CRP V IH UCAS LCAS RAH t ASR V IH Address Row RAD I/O ...
Page 16
V IH RAS CRP V IH UCAS LCAS RAH t ASR V IH Row Address Address RAD t WCS ...
Page 17
V IH RAS CSH t RCD V IH UCAS LCAS RAD t t RAH CAH t t ASR ASC V IH Address Row Column RWD t RCS ...
Page 18
V IH RAS UCAS LCAS ASR V IH Address I/O (Outputs "H" or "L" RAS-only Refresh Cycle Semiconductor Group RAS t RAH Row Hi ...
Page 19
RAS RPC UCAS LCAS ODD V IH I/O (Inputs CDD t OEZ V ...
Page 20
V IH RAS UCAS LCAS RAD t ASC t RAH t ASR V IH Address Row RCS DZC V ...
Page 21
V IH RAS RCD V IH UCAS LCAS RAD t ASC t RAH t ASR V IH Address Row WCS I/O (Input) V ...
Page 22
Read Cycle V IH RAS CSR V IH UCAS LCAS Address WRP I/O (Inputs ...
Page 23
Package Outlines Plastic Package P-SOJ-42-1 (SMD) (400mil) (Plastic small outline J-leaded) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 1M ...
Page 24
Plastic Package P-TSOPII-50/44-1 (400 mil) (SMD) (Plastic Thin Small Outline Package (Type II)) 0.8 24x 0 +0.05 0.4 -0 2.5 max 20.95 Index Marking 1) Does not include plastic or metal protrusion of ...