AO4801 Alpha & Omega Semiconductor, AO4801 Datasheet

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AO4801

Manufacturer Part Number
AO4801
Description
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4801 uses advanced trench technology to provide
excellent R
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. It may be used in a
common drain arrangement to form a bidirectional blocking
switch. Standard Product AO4801 is Pb-free (meets ROHS &
Sony 259 specifications). AO4801L is a Green Product
ordering option. AO4801 and AO4801L are electrically
identical.
AO4801
Dual P-Channel Enhancement Mode Field Effect Transistor
A
S2
G2
S1
G1
DS(ON)
SOIC-8
1
2
3
4
, low gate charge and operation with gate
A
8
7
6
5
B
T
T
T
T
A
A
A
A
D2
D2
D1
D1
=25°C
=70°C
=25°C
=70°C
C
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
G1
Symbol
R
R
θJA
θJL
D1
S1
Features
V
I
R
R
R
D
Maximum
-55 to 150
DS
DS(ON)
DS(ON)
DS(ON)
= -5 A (V
(V) = -30V
1.44
-4.2
Typ
±12
-30
-30
48
74
35
-5
G2
2
< 49mΩ (V
< 64mΩ (V
< 120mΩ (V
GS
D2
S2
= -10V)
Max
62.5
110
40
GS
GS
GS
= -10V)
= -4.5V)
= -2.5V)
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4801 Summary of contents

Page 1

... This device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to form a bidirectional blocking switch. Standard Product AO4801 is Pb-free (meets ROHS & Sony 259 specifications). AO4801L is a Green Product ordering option. AO4801 and AO4801L are electrically identical ...

Page 2

... AO4801 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10V -4. (Volts) DS Fig 1: On-Region Characteristics 120 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 190 170 150 130 110 25° ...

Page 4

... AO4801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-15V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) 10.0 limited 0.1s 1s 1.0 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...

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