AO4807 Alpha & Omega Semiconductor Inc, AO4807 Datasheet

MOSFET DUAL P-CH -30V -6A 8-SOIC

AO4807

Manufacturer Part Number
AO4807
Description
MOSFET DUAL P-CH -30V -6A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4807

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
2.4V @ 250µA
Gate Charge (qg) @ Vgs
18.5nC @ 10V
Input Capacitance (ciss) @ Vds
920pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1057-2

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Rev 5: Jan 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4807 uses advanced trench technology to provide
excellent R
device is suitable for use as a load switch or in PWM
applications.
Top View
DS(ON)
, and ultra-low low gate charge. This
B
Parameter
C
Pin1
SOIC-8
C
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
C
Bottom
A
A D
A
=25°C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
Symbol
V
V
I
I
I
E
P
T
Symbol
D
DM
AS
J
DS
GS
AS
D
www.aosmd.com
, T
, I
R
R
, E
AR
STG
θJA
θJL
S2
G2
S1
G1
AR
Top View
V
I
R
R
100% UIS Tested
100% R
Product Summary
D
DS
DS(ON)
DS(ON)
(at V
Typ
48
74
32
(at V
(at V
GS
g
=-10V)
Tested
D2
D2
D1
D1
30V Dual P-Channel MOSFET
GS
GS
Maximum
-55 to 150
=-10V)
= -4.5V)
±20
-30
-30
1.3
23
26
-6
-5
2
G1
Max
62.5
90
40
D
S1
G2
-30V
-6A
< 35mΩ
< 58mΩ
AO4807
Units
Units
°C/W
°C/W
°C/W
mJ
Page 1 of 6
°C
W
V
V
A
A
D2
S2

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AO4807 Summary of contents

Page 1

... General Description The AO4807 uses advanced trench technology to provide excellent R , and ultra-low low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications. SOIC-8 Top View Bottom Pin1 Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter ...

Page 2

... Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. θJL =150°C. The SOA curve provides a single pulse rating. J(MAX) www.aosmd.com AO4807 Min Typ Max Units - =55°C ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 1.8 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =-6A D 1.0E+01 40 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4807 125°C 25°C 2 2.5 3 3 (Volts =-10V =-4. =- ...

Page 4

... R DS(ON) limited 1.0 T =100°C A 0.1 T J(Max 0.0 0.01 100 1000 (µs) A Figure 10: Maximum Forward Biased Safe 0.1 Pulse Width (s) www.aosmd.com AO4807 C iss C oss (Volts) DS Figure 8: Capacitance Characteristics 10µs 100µs 1ms 10ms =150°C 10s =25°C DC 0.1 1 ...

Page 5

... Single Pulse 0.001 0.00001 0.0001 0.001 Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 5: Jan 2010 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse P D 0.01 0.1 1 Pulse Width (s) 40 www.aosmd.com AO4807 100 1000 Page ...

Page 6

... DUT Resistive Switching Test Circuit & Waveforms Vgs d(on Vdd VDC + Vds 1 Vds - Vgs Vdd VDC Id + Vgs Diode Recovery Test Circuit & Waveforms Idt Vgs -Isd - Vdd VDC - -Vds www.aosmd.com AO4807 Qg Qgd Charge t off t t d(off) f 90% 10% BV DSS dI/ Vdd Page ...

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