AO4806 Alpha & Omega Semiconductor Inc, AO4806 Datasheet

MOSFET DUAL N-CH 20V 9.4A 8-SOIC

AO4806

Manufacturer Part Number
AO4806
Description
MOSFET DUAL N-CH 20V 9.4A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4806

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 9.4A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
1810pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1056-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4806
Manufacturer:
CIRRUS
Quantity:
12 492
Part Number:
AO4806
Manufacturer:
AO
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4806
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4806 uses advanced trench technology to
provide excellent R
offer operation over a wide gate drive range from 1.8V
to 12V. It is ESD protected. This device is suitable for
use as a uni-directional or bi-directional load switch,
facilitated by its common-drain configuration.
Standard Product AO4806 is Pb-free (meets ROHS &
Sony 259 specifications). AO4806L is a Green
Product ordering option. AO4806 and AO4806L are
electrically identical.
S2
G2
S1
G1
A
SOIC-8
1
2
3
4
8
7
6
5
DS(ON)
D2
D2
D1
D1
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
and low gate charge. They
C
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
G1
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
D1
S1
Symbol
Features
V
I
R
R
R
R
ESD Rating: 2000V HBM
D
G2
R
R
DS
DS(ON)
DS(ON)
DS(ON)
DS(ON)
= 9.4A (V
θJA
θJL
(V) = 20V
< 14mΩ (V
< 15mΩ (V
< 21mΩ (V
< 30mΩ (V
Maximum
-55 to 150
D2
S2
GS
1.28
Typ
±12
9.4
7.5
20
40
45
72
34
2
= 10V)
GS
GS
GS
GS
= 10V)
= 4.5V)
= 2.5V)
= 1.8V)
Max
62.5
110
40
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO4806 Summary of contents

Page 1

... It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO4806 is Pb-free (meets ROHS & Sony 259 specifications). AO4806L is a Green Product ordering option. AO4806 and AO4806L are electrically identical. ...

Page 2

... AO4806 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Source leakage current GSS BV Gate-Source Breakdown Voltage GSO V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance ...

Page 3

... AO4806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V 4.5V 2. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd =1. 1.6 =1.8V 1.4 V =2.5V GS 1.2 V =4. =10V GS 0 1.0E+01 1.0E+00 ...

Page 4

... AO4806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =10V DS I =9. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1ms 10ms 0.1s 1 =150°C 10s J(Max) T =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA J, =62.5°C/W θ ...

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