AO6800 Alpha & Omega Semiconductor Inc, AO6800 Datasheet

MOSFET DUAL N-CH 30V 3.4A 6-TSOP

AO6800

Manufacturer Part Number
AO6800
Description
MOSFET DUAL N-CH 30V 3.4A 6-TSOP
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO6800

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
4.96nC @ 4.5V
Input Capacitance (ciss) @ Vds
390pF @ 15V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1081-2

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Part Number
Manufacturer
Quantity
Price
Part Number:
AO6800
Manufacturer:
Alpha & Omega Semiconductor In
Quantity:
135
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Part Number:
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Rev 5: December 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO6800 uses advanced trench technology to provide
excellent R
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
DS(ON)
Top View
, low gate charge and operation with gate
B
C
T
T
T
T
Pin1
TSOP6
A
A
A
A
=25° C
=70° C
=25° C
=70° C
Bottom View
A
A D
A
=25° C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
Symbol
V
V
I
I
P
T
Symbol
www.aosmd.com
D
DM
J
DS
GS
D
, T
R
R
STG
JA
JL
G2
G1
S2
Top View
1
2
3
Product Summary
V
I
R
R
R
D
DS
DS(ON)
DS(ON)
DS(ON)
(at V
6
5
4
Typ
106
78
64
(at V
(at V
(at V
GS
=10V)
D1
S1
D2
30V Dual N-Channel MOSFET
GS
GS
GS
Maximum
-55 to 150
= 10V)
= 4.5V)
= 2.5V)
1.15
0.73
±12
3.4
2.7
30
20
G1
Max
110
150
80
D1
S1
G2
30V
3.4A
< 60m
< 70m
< 90m
AO6800
Units
Units
° C/W
° C/W
° C/W
° C
W
V
V
A
Page 1 of 5
D2
S2

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AO6800 Summary of contents

Page 1

... General Description The AO6800 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. TSOP6 Top View Bottom View Pin1 Absolute Maximum Ratings T =25° ...

Page 2

... FR-4 board with 2oz. Copper still air environment with T =150° C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO6800 Min Typ Max Units =55° C ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 2 1.8 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =3.4A D 1.0E+01 40 1.0E+00 125° C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO6800 125° C 25° 1 (Volts =4. = =2. = =10V GS I =3.4A D ...

Page 4

... DC 10s 1 10 100 0.00001 Figure 10: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Single Pulse 0.01 0.1 1 Pulse Width (s) www.aosmd.com AO6800 C iss C oss (Volts) DS Figure 8: Capacitance Characteristics T =25° 0.001 0.1 ...

Page 5

... VDC - Vgs Isd Rev 5: December 2010 Gate Charge Test Circuit & Waveform Vgs 10V + Qgs Vds VDC - DUT R es istiv itch ing ircu it & iode R ecovery T est C ircuit & W aveform Isd + www.aosmd.com AO6800 Qg Qgd Charge ff Idt dI/ Page ...

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