AO6800 Alpha & Omega Semiconductor Inc, AO6800 Datasheet - Page 2

• Manufacturer Part Number: AO6800
• Description: MOSFET DUAL N-CH 30V 3.4A 6-TSOP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO6800

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 4.96nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 390pF @ 15V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1081-2

Rev 5: December 2010
A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation P
C. Repetitive rating, pulse width limited by junction temperature T
initialT
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2oz. Copper, assuming a maximum junction temperature of T
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
J
=25° C.
JA
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
JA
is measured with the device mounted on 1in
D
is based on T
Parameter
J
=25° C unless otherwise noted)
J(MAX)
=150° C, using ≤ 10s junction-to-ambient thermal resistance.
www.aosmd.com
J(MAX)
Conditions
I
V
V
V
V
V
V
V
V
I
V
V
V
V
R
I
D
S
F
F
2
DS
DS
DS
GS
GS
GS
GS
DS
GS
GS
GS
GS
=1A,V
GEN
=3.4A, dI/dt=100A/ s
=3.4A, dI/dt=100A/ s
=250 A, V
J(MAX)
FR-4 board with 2oz. Copper, in a still air environment with T
=150° C. The SOA curve provides a single pulse ratin g.
=30V, V
=0V, V
=V
=5V, I
=10V, V
=10V, I
=4.5V, I
=2.5V, I
=0V, V
=0V, V
=10V, V
=10V, V
=3
=150° C. Ratings are based on low frequency and duty cycles to keep
GS
GS
JL
I
D
and lead to ambient.
D
=0V
GS
=3.4A
DS
DS
D
=250 A
GS
D
D
DS
DS
DS
=3.4A
GS
=±12V
=3A
=2A
=15V, f=1MHz
=0V, f=1MHz
=0V
=5V
=15V, I
=15V, R
=0V
D
L
=3.4A
T
=4.4 ,
T
J
=125° C
J
=55° C
Min
0.5
30
20
0.75
0.95
17.5
2.55
Typ
235
73
4.3
4.7
1.6
3.5
1.5
2.5
8.5
46
50
62
14
35
18
10
1
2
±100
Max
A
FR-4 board with
88
1.5
1.5
60
70
90
5
=25° C. The
1
1
Page 2 of 5
AO6800
Units
m
m
m
nA
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
V
A
S
V
A
A