AO7801 Alpha & Omega Semiconductor Inc, AO7801 Datasheet

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AO7801

Manufacturer Part Number
AO7801
Description
MOSFET P-CH 20V 0.6A SC70-6
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO7801

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
520 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
1.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
140pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1208-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO7801
Manufacturer:
ALPHA
Quantity:
90 000
Part Number:
AO7801
Manufacturer:
AOS/万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO7801 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected to 2KV HBM. Standard Product
AO7801 is Pb-free (meets ROHS & Sony 259
specifications). AO7801L is a Green Product
ordering option. AO7801 and AO7801L are
electrically identical.
AO7801
Dual P-Channel Enhancement Mode Field Effect Transistor
A
A
S1
G1
D2
DS(ON)
(SOT-323)
B
Top View
SC-70-6
T
T
T
T
A
A
A
A
1
2
3
=25°C
=70°C
=25°C
=70°C
, low gate charge, and
6
5
4
C
A
A
D1
G2
S2
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
G1
Symbol
Features
V
I
R
R
R
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= -0.6A (V
(V) = -20V
D1
S1
< 520mΩ (V
< 700mΩ (V
< 950mΩ (V
Maximum
-55 to 150
-0.48
0.19
-0.6
Typ
360
400
300
-20
0.3
GS
±8
-3
G2
= -4.5V)
GS
GS
GS
= -4.5V)
= -2.5V)
= -1.8V)
Max
415
460
350
D2
S2
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO7801 Summary of contents

Page 1

... SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters ESD protected to 2KV HBM. Standard Product AO7801 is Pb-free (meets ROHS & Sony 259 specifications). AO7801L is a Green Product ordering option. AO7801 and AO7801L are electrically identical. ...

Page 2

... AO7801 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO7801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 -10V (Volts) DS Fig 1: On-Region Characteristics 900 V =-1.8V GS 800 700 V GS 600 500 400 300 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 900 800 700 125°C 600 500 25°C 400 300 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

Page 4

... AO7801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-10V DS I =-0. 0.0 0.5 1.0 -Q (nC) g Figure 7: Gate-Charge Characteristics 10.00 T =150°C, T =25°C J(Max DS(ON) 1.00 limited 0.10 1s 10s 0.01 0.00 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =415° ...

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