AO4800B Alpha & Omega Semiconductor Inc, AO4800B Datasheet
AO4800B
Specifications of AO4800B
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AO4800B Summary of contents
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... General Description The AO4800B uses advanced trench technology to provide excellent R and low gate charge. The two DS(ON) MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. SOIC-8 Top View Bottom View Pin1 Absolute Maximum Ratings T =25° C unless otherwise noted ...
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... FR-4 board with 2oz. Copper still air environment with T =150° C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO4800B Min Typ Max Units =55° C ...
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... Figure 2: Transfer Characteristics (Note E) 1.8 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 I =6.9A D 1.0E+00 1.0E-01 125° C 1.0E-02 1.0E-03 1.0E-04 25° C 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4800B V =5V DS 25° C 125° 1 (Volts =4. = =10V =6. 100 ...
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... Figure 8: Capacitance Characteristics 100.0 T =100° DS(ON) limited 1.0 0.1 T J(Max) T =25°C A 0.0 0.01 100 1000 ( s) A Figure 10: Maximum Forward Biased Safe 0.1 Pulse Width (s) www.aosmd.com AO4800B C iss C oss (Volts 100 s 1ms 10ms DC 10s =150°C 0 100 V (Volts) DS Operating Area (Note F) T =25° ...
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... C/W JA 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3: Oct 2010 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse P D 0.01 0.1 1 Pulse Width (s) www.aosmd.com AO4800B 100 1000 Page ...
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... VDC - DUT Resistive Switching Test Circuit & W aveforms RL Vds + DUT Vdd VDC - Vgs d(on 1 Vds + Vgs Vdd VDC Id - Vgs Diode Recovery Test Circuit & W aveforms Idt Vgs Isd Vdd VDC - Vds www.aosmd.com AO4800B Qg Qgd Charge 90% 10 d(off) t off DSS dI/ Vdd Page ...