AO4800B Alpha & Omega Semiconductor Inc, AO4800B Datasheet - Page 4

• Manufacturer Part Number: AO4800B
• Description: MOSFET DUAL N-CH 30V 6.9A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4800B

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1100pF @ 15V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1053-2

Rev 3: Oct 2010
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
10000
1000
100.0
0
100
10.0
10
1.0
0.00001
V
I
1
D
DS
=6.9A
Figure 9: Single Pulse Avalanche capability (Note
=15V
1
Figure 7: Gate-Charge Characteristics
T
T
A
A
=150° C
=25° C
2
Time in avalanche, t
10
Q
T
g
A
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
(nC)
=125° C
4
C)
0.001
T
A
=100° C
100
A
( s)
6
www.aosmd.com
Pulse Width (s)
1000
8
0.1
100.0
10.0
1000
1.0
0.1
0.0
800
600
400
200
0.01
0
0
Figure 10: Maximum Forward Biased Safe
R
limited
DS(ON)
T
T
C
J(Max)
A
rss
=25°C
Figure 8: Capacitance Characteristics
5
=150°C
C
Operating Area (Note F)
0.1
oss
10
10
V
V
DS
DS
(Volts)
(Volts)
1
15
C
iss
DC
T
20
A
=25° C
10
25
AO4800B
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1000
10ms
1ms
10 s
10s
100 s
100
30