AO8803 Alpha & Omega Semiconductor Inc, AO8803 Datasheet
AO8803
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AO8803 Summary of contents
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... AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO8803/L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications ESD protected. AO8803 and AO8803L are electrically identical ...
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... AO8803 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO8803 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -8V -3.0V 20 -2. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd =- -1. =-1. 0.2 0.4 1.6 =-1.8V GS 1.4 =-2.5V GS 1.2 1.0 V =-4 ...
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... AO8803 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-10V (nC) g Figure 7: Gate-Charge Characteristics 100 R 10 DS(ON) 1ms limited 0.1s 1 10s T =150°C 0 J(Max) T =25° 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA θJA R =90°C/W θ ...