AO4932 Alpha & Omega Semiconductor Inc, AO4932 Datasheet

MOSFET DUAL N-CH 30V 9A ASYM SO8

AO4932

Manufacturer Part Number
AO4932
Description
MOSFET DUAL N-CH 30V 9A ASYM SO8
Manufacturer
Alpha & Omega Semiconductor Inc
Series
SRFET™r
Datasheet

Specifications of AO4932

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15.8 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2.4V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
1885pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1065-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4932
Manufacturer:
AOS
Quantity:
8 000
Rev 3: Dec 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
The AO4932 uses advanced trench technology to provide
excellent R
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with
the synchronous MOSFET to boost efficiency further.
General Description
Top View
Top View
DS(ON)
B
Parameter
and low gate charge. The two MOSFETs
Pin1
SOIC-8
SOIC-8
C
C
T
T
T
T
A
A
A
A
=25° C
=70° C
=25° C
=70° C
Bottom View
Bottom View
C
A
A D
A
=25° C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
D2
D2
D2
D2
G1
G1
S1
www.aosmd.com
Symbol
V
V
I
I
I
E
P
T
Symbol
D
DM
AS
DS
GS
AS
D
J
, T
, I
R
, E
R
Top View
Top View
AR
STG
JA
JL
AR
Asymmetric Dual N-Channel MOSFET
Product Summary
FET1(N-Channel)
V
I
R
< 15.8m (V
< 19.6m (V
100% UIS Tested
100% R
D
DS
DS(ON)
= 9A (V
G2
G2
S2/D1
S2/D1
S2/D1
S2/D1
S2/D1
Max FE1
= 30V
Typ
±12
7.2
1.3
30
40
27
36
48
74
32
9
2
g
SRFET
SRFET
Soft Recovery MOSFET:
Soft Recovery MOSFET:
Integrated Schottky Diode
Integrated Schottky Diode
GS
Tested
=10V)
GS
GS
-55 to 150
=10V)
=4.5V)
TM
TM
Max FET2
G1
Max
62.5
±20
6.5
1.3
30
40
19
18
90
40
8
2
FET2(N-Channel)
30V
8A (V
R
< 19m (VGS=10V)
< 23m (VGS=4.5V)
100% UIS Tested
100% R
DS(ON)
GS
D1
D1
S1
=10V)
AO4932
g
G2
Tested
SRFET
SRFET
Page 1 of 9
Units
Units
° C/W
° C/W
° C/W
mJ
° C
W
V
V
A
A
D2
D2
S2
TM
TM

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AO4932 Summary of contents

Page 1

... General Description The AO4932 uses advanced trench technology to provide excellent R and low gate charge. The two MOSFETs DS(ON) make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. ...

Page 2

... Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150°C. The SOA curve provides a single pulse rating. J(MAX) www.aosmd.com AO4932 Min Typ Max 30 0.01 0.1 T =125° C ...

Page 3

... Figure 2: Transfer Characteristics (Note 1.8 1.8 1.6 1.6 1.4 1.4 1.2 1 0.8 0 (A) (A) 1.0E+02 I =9A D 1.0E+01 40 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 1.0E-04 1.0E- www.aosmd.com AO4932 =5V =5V 125°C 125°C 25°C 25°C 1.5 1 2.5 2 3.5 3 (Volts) (Volts =10V =10V =9A = =4.5V =4.5V 5 ...

Page 4

... DC DC 10s 10s 1 1 0.00001 0.00001 10 10 100 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse JA 0.001 0.01 0.1 Pulse Width (s) www.aosmd.com AO4932 C C iss iss C C oss oss rss rss (Volts) (Volts Figure 8: Capacitance Characteristics ...

Page 5

... Figure 15: Diode Reverse Recovery Time and Figure 15: Diode Reverse Recovery Time and 10 15 125º 25º 125º 25º 800 1000 0 Figure 17: Diode Reverse Recovery Time and www.aosmd.com AO4932 20A 20A 10A 10A =1A = 100 100 150 150 Temperature (° C) Temperature (° C) Temperature Temperature 125ºC 125º ...

Page 6

... FR-4 board with 2oz. Copper still air environment with T =150°C, using ≤ 10s junction-to-ambient thermal resistance. =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150°C. The SOA curve provides a single pulse rating. J(MAX) www.aosmd.com AO4932 Min Typ Max =55° ...

Page 7

... Figure 2: Transfer Characteristics (Note E) Figure 2: Transfer Characteristics (Note E) 1.6 1.6 1.4 1.4 1.2 1 0.8 0 (A) (A) 1.0E+02 I =8A D 1.0E+01 40 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 1.0E-04 1.0E- www.aosmd.com AO4932 =5V = 125°C 125°C 25°C 25°C 1.5 1 2.5 2 3.5 3 (Volts) (Volts =10V =10V =8A =8A D ...

Page 8

... 100 100 0.00001 0.00001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse JA 0.001 0.01 0.1 Pulse Width (s) www.aosmd.com AO4932 C C iss iss C C oss oss rss rss (Volts) (Volts Figure 8: Capacitance Characteristics ...

Page 9

... Unclamped Inductive Switching (UIS) Test Circuit & W aveforms Vds Vds + Vgs Vdd VDC Id - Vgs Diode Recovery Test Circuit & Waveforms Vgs Isd + Vdd VDC - Vds www.aosmd.com Qg Qg Qgs Qgs Qgd Qgd Charge Charge 90% 90% 10% 10 d(off) d(off off off Idt dI/ Vdd Page AO4932 DSS DSS ...

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