AO4842 Alpha & Omega Semiconductor Inc, AO4842 Datasheet
AO4842
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AO4842 Summary of contents
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... AO4842 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4842/L uses advanced trench technology to provide excellent R and low gate charge. The DS(ON) two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4842 and AO4842L are electrically identical ...
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... AO4842 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4842 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 5V 10V (Volts) DS Fig 1: On-Region Characteristics =4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 30 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 FUNCTIONS AND RELIABILITY WITHOUT NOTICE ...
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... AO4842 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =7. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 100µs 1ms 10.0 10ms 0.1s 1.0 T =150°C J(Max) T =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =62.5° ...