AO4828 Alpha & Omega Semiconductor Inc, AO4828 Datasheet

MOSFET DUAL N-CH 60V 4.5A 8-SOIC

AO4828

Manufacturer Part Number
AO4828
Description
MOSFET DUAL N-CH 60V 4.5A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4828

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
56 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10.5nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 30V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1062-2

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Part Number
Manufacturer
Quantity
Price
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AO4828
Manufacturer:
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Quantity:
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Part Number:
AO4828
Manufacturer:
ALPHA
Quantity:
20 000
Part Number:
AO4828L
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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Avalanche Current
Repetitive avalanche energy 0.1mH
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4828 uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications.
Top View
AF
Pin1
SOIC-8
B
DS(ON)
B
T
T
T
T
A
A
A
A
=25° C
=70° C
=25° C
=70° C
and low gate charge. This
Bottom View
C
A
A
A
=25° C unless otherwise noted
B
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
I
E
T
D
DM
AR,
J
DS
GS
D
AR,
, T
I
AS
E
STG
AS
S2
G2
S1
G1
Symbol
Top View
Features
V
I
R
R
100% UIS tested
100% Rg tested
R
R
D
60V Dual N-Channel MOSFET
DS
DS(ON)
DS(ON)
= 4.5A (V
JA
JL
(V) = 60V
< 56m
< 77m
Maximum
-55 to 150
D2
D2
D1
D1
GS
1.28
Typ
±20
4.5
3.6
60
20
19
18
48
74
35
2
= 10V)
(V
(V
G1
GS
GS
= 10V)
= 4.5V)
Max
62.5
110
60
D
1
S1
AO4828
www.aosmd.com
G2
Units
Units
° C/W
° C/W
° C/W
mJ
° C
W
V
V
A
A
D
2
S2

Related parts for AO4828

AO4828 Summary of contents

Page 1

... General Description The AO4828 uses advanced trench technology to provide excellent R and low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications. SOIC-8 Top View Bottom View Pin1 Absolute Maximum Ratings T Parameter Drain-Source Voltage Gate-Source Voltage T =25° C ...

Page 2

... AO4828 Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4828 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 (Volts) DS Fig 1: On-Region Characteristics 100 =4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 140 120 100 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd 4.5V 4. =3. 1.8 1.6 1.4 1.2 ...

Page 4

... AO4828 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =30V 4. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 10ms 1s 1.0 10s T =150°C J(Max =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =62.5°C 0.1 0.01 0.00001 0.0001 Alpha & ...

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