AO4842 Alpha & Omega Semiconductor Inc, AO4842 Datasheet - Page 3
![MOSFET DUAL N-CH 30V 7.5A 8-SOIC](/photos/5/45/54511/ao4842_sml.jpg)
AO4842
Manufacturer Part Number
AO4842
Description
MOSFET DUAL N-CH 30V 7.5A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet
1.AO4842.pdf
(4 pages)
Specifications of AO4842
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
820pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1064-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AO4842
Manufacturer:
AOS
Quantity:
15 000
Part Number:
AO4842
Manufacturer:
AOS系列
Quantity:
20 000
Company:
Part Number:
AO4842L
Manufacturer:
ALPHA
Quantity:
1 730
Part Number:
AO4842L
Manufacturer:
AO
Quantity:
20 000
AO4842
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
40
35
30
25
20
15
10
30
25
20
15
10
60
50
40
30
20
10
5
0
0
0
2
10V
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
Fig 1: On-Region Characteristics
1
6V
5
5V
4
Gate Voltage
2
V
V
V
DS
GS
GS
I
D
(Volts)
10
=4.5V
V
(A)
(Volts)
6
GS
=10V
V
V
I
I
I
F
F
D
3
GS
GS
=7.4A, dI/dt=100A/µs
=7.4A, dI/dt=100A/µs
=7.5A
=10V, V
=10V, V
4.5V
V
15
8
GS
4
=3V
125°C
25°C
DS
DS
4V
3.5V
=15V, I
=15V, R
20
10
5
D
L
=7.4A
=2.0Ω, R
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
20
16
12
1.6
1.4
1.2
0.8
0.6
8
4
0
1
1.5
-50
Figure 4: On-Resistance vs. Junction Temperature
GEN
0.0
-25
=3Ω
V
I
D
DS
2
=7.5A
Figure 2: Transfer Characteristics
=5V
Figure 6: Body-Diode Characteristics
0
0.2
2.5
25
125°C
125°C
Temperature (°C)
V
GS
50
0.4
(Volts)
V
3
V
SD
GS
75
(Volts)
=10V
25°C
3.5
0.6
100 125 150 175
25°C
V
GS
=4.5V
4
0.8
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4.5
1.0