AOD412 Alpha & Omega Semiconductor, AOD412 Datasheet
AOD412
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AOD412 Summary of contents
Page 1
... DS(ON) gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specifications). AOD412L is a Green Product ordering option. AOD412 and AOD412L are electrically identical. TO-252 D-PAK ...
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... AOD412 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AOD412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V (Volts) DS Fig 1: On-Region Characteristics =4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...
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... AOD412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =20A (nC) g Figure 7: Gate-Charge Characteristics 1000 R DS(ON) limited 100 1ms 10ms 0. 10s T =150°C 1 J(Max =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ...
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... AOD412 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 ˜ 0.00001 0.0001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability 100 100 T (°C) CASE Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. ...