AT90USB162 Atmel Corporation, AT90USB162 Datasheet - Page 249

• Manufacturer Part Number: AT90USB162
• Manufacturer: Atmel Corporation

Specifications of AT90USB162

• Flash (kbytes): 16 Kbytes
• Pin Count: 32
• Max. Operating Frequency: 16 MHz
• Cpu: 8-bit AVR
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 22
• Ext Interrupts: 21
• Usb Transceiver: 1
• Usb Speed: Full Speed
• Usb Interface: Device
• Spi: 2
• Uart: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Analog Comparators: 1
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 0.5
• Eeprom (bytes): 512
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 2.7 to 5.5
• Operating Voltage (vcc): 2.7 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 2
• Output Compare Channels: 5
• Input Capture Channels: 1
• Pwm Channels: 4
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

25.6
25.6.1
25.6.2
25.6.3
25.6.4
7707F–AVR–11/10
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
Programming the Flash
The following algorithm puts the device in parallel programming mode:
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
1. Apply 4.5 - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after
5. Wait at least 50 µs before sending a new command.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
100 ns.
+12V has been applied to RESET, will cause the device to fail entering programming
mode.
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
CC
and GND.
Table 25-11 on page
Table 25-8 on page 248
(1)
memories plus Lock bits. The Lock bits are
248. When programming the Flash,
to “0000” and wait at least
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