AT90USB162 Atmel Corporation, AT90USB162 Datasheet - Page 259

• Manufacturer Part Number: AT90USB162
• Manufacturer: Atmel Corporation

Specifications of AT90USB162

• Flash (kbytes): 16 Kbytes
• Pin Count: 32
• Max. Operating Frequency: 16 MHz
• Cpu: 8-bit AVR
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 22
• Ext Interrupts: 21
• Usb Transceiver: 1
• Usb Speed: Full Speed
• Usb Interface: Device
• Spi: 2
• Uart: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Analog Comparators: 1
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 0.5
• Eeprom (bytes): 512
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 2.7 to 5.5
• Operating Voltage (vcc): 2.7 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 2
• Output Compare Channels: 5
• Input Capture Channels: 1
• Pwm Channels: 4
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

7707F–AVR–11/10
Table 25-15. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Figure 25-11. Serial Programming Waveforms
Symbol
t
t
t
5. The EEPROM array is programmed one byte at a time by supplying the address and
6. Any memory location can be verified by using the Read instruction which returns the
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
WD_FLASH
WD_EEPROM
WD_ERASE
Memory Page instruction. To ensure correct loading of the page, the data low byte must
be loaded before data high byte is applied for a given address. The Program Memory
Page is stored by loading the Write Program Memory Page instruction with the address
lines 15..8. Before issuing this command, make sure the instruction Load Extended
Address Byte has been used to define the MSB of the address. The extended address
byte is stored until the command is re-issued, i.e., the command needs only to be
issued for the first page, since the memory size is not larger than 64KWord. If polling
(
page. (See
write operation completes can result in incorrect programming.
data together with the appropriate Write instruction. An EEPROM memory location is
first automatically erased before new data is written. If polling is not used, the user must
wait at least t
erased device, no 0xFFs in the data file(s) need to be programmed.
content at the selected address at serial output PDO. When reading the Flash memory,
use the instruction Load Extended Address Byte to define the upper address byte,
which is not included in the Read Program Memory instruction. The extended address
byte is stored until the command is re-issued, i.e., the command needs only to be
issued for the first page, since the memory size is not larger than 64KWord.
operation.
Set RESET to “1”.
Turn V
SERIAL DATA OUTPUT
SERIAL CLOCK INPUT
RDY/BSY
SERIAL DATA INPUT
CC
) is not used, the user must wait at least t
power off.
SAMPLE
Table
(MOSI)
(MISO)
(SCK)
WD_EEPROM
25-15.) Accessing the serial programming interface before the Flash
before issuing the next byte. (See
MSB
MSB
Minimum Wait Delay
WD_FLASH
4.5 ms
9.0 ms
9.0 ms
Table
AT90USB82/162
before issuing the next
25-15.) In a chip
LSB
LSB
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