PMEG2010EPA NXP Semiconductors, PMEG2010EPA Datasheet - Page 2

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection

PMEG2010EPA

Manufacturer Part Number
PMEG2010EPA
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PMEG2010EPA_1
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number
PMEG2010EPA HUSON3 plastic thermal enhanced ultra thin small outline package;
Type number
PMEG2010EPA
Symbol
V
I
I
I
P
F(AV)
FRM
FSM
R
tot
Pinning
Ordering information
Marking codes
Limiting values
Description
anode
anode
cathode
Parameter
reverse voltage
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
Package
Name
Rev. 01 — 15 December 2009
Description
no leads; three terminals; body 2 × 2 × 0.65 mm
Conditions
T
square wave;
δ = 0.5;
f = 20 kHz
T
T
t
δ ≤ 0.25
square wave;
t
T
p
p
j
amb
sp
amb
≤ 1 ms;
= 8 ms
= 25 °C
≤ 145 °C
1 A low V
≤ 125 °C
≤ 25 °C
Marking code
A1
Simplified outline
Transparent top view
1
F
MEGA Schottky barrier rectifier
PMEG2010EPA
[2][3]
[4][5]
[4][6]
[4][1]
3
[1]
[2]
Min
-
-
-
-
-
-
-
-
2
Graphic symbol
© NXP B.V. 2009. All rights reserved.
Max
20
1
1
7
17
500
960
1800
3
006aab624
1, 2
Version
SOT1061
Unit
V
A
A
A
A
mW
mW
mW
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