PMEG2010EPA NXP Semiconductors, PMEG2010EPA Datasheet - Page 6

• Manufacturer Part Number: PMEG2010EPA
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMEG2010EPA_1
Product data sheet
Fig 4.
Fig 6.
(A)
I
10
10
10
10
(1) T
(2) T
(3) T
(4) T
(5) T
F
10
−1
−2
−3
−4
1
0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse voltage; typical values
j
j
j
j
j
= 150 °C
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(1)
(2)
(3)
amb
0.2
= 25 °C
(4)
(5)
(pF)
0.4
C
350
300
250
200
150
100
d
50
0
0
V
F
006aab628
(V)
Rev. 01 — 15 December 2009
4
0.6
8
Fig 5.
12
(A)
I
10
10
10
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
R
−1
−2
−3
−4
−5
−6
−7
−8
0
Reverse current as a function of reverse
voltage; typical values
16
1 A low V
j
j
j
j
= 125 °C
= 85 °C
= 25 °C
= −40 °C
006aab630
V
R
(V)
20
5
F
MEGA Schottky barrier rectifier
PMEG2010EPA
(1)
(2)
(3)
(4)
10
15
© NXP B.V. 2009. All rights reserved.
006aab629
V
R
(V)
20
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