PMEG2010EPA NXP Semiconductors, PMEG2010EPA Datasheet - Page 7

• Manufacturer Part Number: PMEG2010EPA
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMEG2010EPA_1
Product data sheet
Fig 7.
Fig 9.
P
I
F(AV)
F(AV)
(W)
(A)
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
0.5
0.4
0.3
0.2
0.1
0.0
1.5
1.0
0.5
0.0
0.0
T
Average forward power dissipation as a
function of average forward current; typical
values
0
FR4 PCB, standard footprint
T
Average forward current as a function of
ambient temperature; typical values
j
j
= 150 °C
= 150 °C
25
(1)
(2)
(3)
(4)
50
(1)
0.5
75
(2)
100
1.0
(3)
125
I
F(AV)
T
amb
006aab631
006aab633
150
(A)
(°C)
(4)
Rev. 01 — 15 December 2009
175
1.5
Fig 8.
Fig 10. Average forward current as a function of
P
I
F(AV)
R(AV)
(W)
(A)
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
1.5
1.0
0.5
1.5
1.0
0.5
0.0
0
0
0
T
Average reverse power dissipation as a
function of reverse voltage; typical values
FR4 PCB, mounting pad for cathode 1 cm
T
ambient temperature; typical values
1 A low V
j
j
= 125 °C
= 150 °C
25
(1)
(2)
(3)
(4)
50
F
5
MEGA Schottky barrier rectifier
PMEG2010EPA
75
(1)
(2)
(3)
100
10
125
T
© NXP B.V. 2009. All rights reserved.
V
amb
R
006aab632
006aab634
150
(V)
(4)
(°C)
2
175
15
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