PMEG2010EPA NXP Semiconductors, PMEG2010EPA Datasheet - Page 4
PMEG2010EPA
Manufacturer Part Number
PMEG2010EPA
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection
Manufacturer
NXP Semiconductors
Datasheet
1.PMEG2010EPA.pdf
(13 pages)
NXP Semiconductors
PMEG2010EPA_1
Product data sheet
Fig 1.
Fig 2.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
10
3
2
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for cathode 1 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
−3
duty cycle =
duty cycle =
0.25
0.25
0.02
0.5
0.1
0.5
0.1
1
0
1
0
0.75
0.33
0.05
0.01
0.75
0.33
0.05
0.02
0.01
0.2
0.2
10
10
−2
−2
10
10
−1
−1
2
Rev. 01 — 15 December 2009
1
1
1 A low V
10
10
F
MEGA Schottky barrier rectifier
PMEG2010EPA
10
10
2
2
t
t
p
p
© NXP B.V. 2009. All rights reserved.
(s)
(s)
006aab625
006aab626
10
10
3
3
4 of 13