PMEG2010EPA NXP Semiconductors, PMEG2010EPA Datasheet - Page 5

• Manufacturer Part Number: PMEG2010EPA
• Description: Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
PMEG2010EPA_1
Product data sheet
Fig 3.
Z
(K/W)
th(j-a)
10
10
1
2
10
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−3
duty cycle =
0.25
0.5
0.1
1
0
0.75
0.33
0.05
0.02
0.01
0.2
Table 7.
T
[1]
2
Symbol
V
I
C
t
10
R
rr
O
j
F
d
= 25
3
−2
, standard footprint
When switched from I
°
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
10
−1
Rev. 01 — 15 December 2009
F
= 10 mA to I
R
1
= 10 mA; R
Conditions
I
I
V
V
f = 1 MHz
F
F
R
R
= 0.5 A
= 1 A
V
V
= 10 V
= 20 V
R
R
= 1 V
= 10 V
L
1 A low V
= 100 Ω; measured at I
10
F
[1]
MEGA Schottky barrier rectifier
PMEG2010EPA
Min
-
-
-
-
-
-
-
10
R
= 1 mA.
2
Typ
280
320
135
335
175
65
50
t
p
© NXP B.V. 2009. All rights reserved.
(s)
006aab627
Max
-
375
-
1900
-
-
-
10
3
Unit
mV
mV
μA
μA
pF
pF
ns
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