PMN25EN NXP Semiconductors, PMN25EN Datasheet - Page 4

• Manufacturer Part Number: PMN25EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMN25EN
Product data sheet
Fig 3.
(A)
I
10
10
D
10
10
–1
–2
1
2
10
voltage
I
(1) t
(2) t
(3) t
(4) DC; T
(5) t
(6) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
–1
= single pulse
p
p
p
p
= 100 µs
= 1 ms
= 10 ms
= 100 ms
sp
amb
= 25 °C
= 25 °C; drain mounting pad 6 cm
All information provided in this document is subject to legal disclaimers.
1
Rev. 1 — 29 August 2011
2
10
30 V, 6.2 A N-channel Trench MOSFET
V
DS
(1)
(2)
(3)
(4)
(5)
(6)
(V)
PMN25EN
© NXP B.V. 2011. All rights reserved.
017aaa311
10
2
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