PMN25EN NXP Semiconductors, PMN25EN Datasheet - Page 5

• Manufacturer Part Number: PMN25EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
PMN25EN
Product data sheet
Symbol
R
R
Fig 4.
Fig 5.
th(j-a)
th(j-sp)
Z
Z
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
3
2
10
10
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
–3
–3
Thermal characteristics
duty cycle = 1
duty cycle = 1
0.25
0.02
0.25
0.5
0.1
0.5
0.1
0
0
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
0.75
0.33
0.05
0.01
0.75
0.33
0.05
0.02
0.01
0.2
0.2
10
10
–2
–2
Conditions
in free air
All information provided in this document is subject to legal disclaimers.
10
10
–1
–1
2
Rev. 1 — 29 August 2011
1
1
10
10
30 V, 6.2 A N-channel Trench MOSFET
[1]
[2]
2
.
Min
-
-
-
10
10
2
2
Typ
200
78
15
PMN25EN
t
t
p
p
© NXP B.V. 2011. All rights reserved.
(s)
(s)
017aaa209
017aaa210
Max
230
90
20
10
10
3
3
Unit
K/W
K/W
K/W
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