PMN25EN NXP Semiconductors, PMN25EN Datasheet - Page 8

• Manufacturer Part Number: PMN25EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMN25EN
Product data sheet
Fig 8.
Fig 10. Transfer characteristics: drain current as a
R
(mΩ)
DSon
(A)
I
D
100
80
60
40
20
25
20
15
10
0
5
0
of drain current; typical values
function of gate-source voltage; typical values
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
(8) V
Drain-source on-state resistance as a function
V
(1) T
(2) T
2
0
j
DS
= 25 °C
> I
(1)
j
j
GS
GS
GS
GS
GS
GS
GS
GS
= 25 °C
= 150 °C
D
= 2.7 V
= 2.8 V
= 2.9 V
= 3.2 V
= 3.4 V
= 4.0 V
= 4.5 V
= 10 V
(2)
1
× R
(3)
DSon
10
(2)
2
(1)
(1)
3
18
(4)
(2)
I
All information provided in this document is subject to legal disclaimers.
4
D
017aaa314
017aaa316
V
(A)
GS
(V)
(5)
(6)
(7)
(8)
26
Rev. 1 — 29 August 2011
5
Fig 9.
Fig 11. Normalized drain-source on-state resistance as
R
(mΩ)
DSon
a
100
1.6
1.4
1.2
1.0
0.8
0.6
75
50
25
0
–60
of gate-source voltage; typical values
a function of junction temperature; typical
values
I
(1) T
(2) T
Drain-source on-state resistance as a function
0
D
= 6.0 A
j
j
= 150 °C
= 25 °C
30 V, 6.2 A N-channel Trench MOSFET
2
0
4
60
6
PMN25EN
120
(1)
(2)
© NXP B.V. 2011. All rights reserved.
8
017aaa315
017aaa248
T
V
j
GS
(°C)
(V)
180
10
8 of 17