PMN25EN NXP Semiconductors, PMN25EN Datasheet - Page 7

• Manufacturer Part Number: PMN25EN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMN25EN
Product data sheet
Fig 6.
(A)
I
D
25
20
15
10
5
0
function of drain-source voltage; typical values
T
Output characteristics: drain current as a
0
j
= 25 °C
10 V
4.5 V
1
2
V
GS
3.2 V
3.0 V
2.9 V
2.7 V
2.4 V
= 3.4 V
3
All information provided in this document is subject to legal disclaimers.
V
017aaa312
DS
(V)
Rev. 1 — 29 August 2011
4
Fig 7.
(A)
I
10
10
10
10
D
–3
–4
–5
–6
gate-source voltage
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
0
j
= 25 °C; V
30 V, 6.2 A N-channel Trench MOSFET
(1)
DS
1
= 5 V
(2)
2
PMN25EN
(3)
V
© NXP B.V. 2011. All rights reserved.
GS
017aaa244
(V)
3
7 of 17