BF1203 NXP Semiconductors, BF1203 Datasheet - Page 10

• Manufacturer Part Number: BF1203
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Amplifier a scattering parameters
V
2001 Apr 25
(MHz)
DS
1000
100
200
300
400
500
600
700
800
900
Dual N-channel dual gate MOS-FET
50
f
= 5 V; V
MAGNITUDE
G2-S
(ratio)
0.987
0.983
0.976
0.946
0.919
0.885
0.851
0.815
0.778
0.747
0.710
= 4 V; I
s
11
D
= 15 mA; T
ANGLE
10.24
20.37
30.36
40.15
49.55
58.50
67.28
75.03
83.30
90.47
5.12
(deg)
amb
MAGNITUDE
(ratio)
= 25 C
2.67
2.66
2.61
2.54
2.47
2.37
2.26
2.15
2.02
1.95
1.83
s
21
ANGLE
174.07
168.16
156.64
145.05
134.13
132.32
113.25
103.20
(deg)
93.78
84.84
75.92
10
MAGNITUDE
0.0006
0.0012
0.0023
0.0030
0.0032
0.0029
0.0024
0.0023
0.0035
0.0070
0.0104
(ratio)
s
12
ANGLE
129.94
172.18
171.55
172.88
85.79
83.27
78.22
73.26
71.40
74.34
90.33
(deg)
MAGNITUDE
(ratio)
0.997
0.996
0.992
0.986
0.980
0.972
0.965
0.960
0.950
0.951
0.947
Product specification
s
BF1203
22
ANGLE
10.12
13.33
16.56
19.74
22.90
26.05
29.10
32.25
(deg)
1.72
3.42
6.77