BF1203 NXP Semiconductors, BF1203 Datasheet - Page 4

• Manufacturer Part Number: BF1203
• Description: Two dual-gate MOS Field-Effect Transistors in a plastic SOT363 package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
STATIC CHARACTERISTICS
T
Note
1. R
2001 Apr 25
Per MOS-FET unless otherwise specified
V
V
V
V
V
V
V
I
I
I
j
SYMBOL
DSX
G1-S
G2-S
= 25 C unless otherwise specified.
(BR)DSS
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
Dual N-channel dual gate MOS-FET
G1
connects gate 1 to V
drain-source breakdown voltage
gate-source breakdown voltage
gate-source breakdown voltage
forward source-gate voltage
forward source-gate voltage
gate-source threshold voltage
gate-source threshold voltage
drain-source current
gate cut-off current
gate cut-off current
PARAMETER
GG
= 5 V.
V
V
V
V
V
V
V
amp. a:
V
amp. b:
V
V
V
G1-S
GS
GS
G2-S
G1-S
DS
DS
G2-S
G2-S
G1-S
G2-S
= 5 V; V
= 5 V; V
= V
= V
= V
= V
= V
= 4 V; V
= 4 V; V
= 5 V; V
= 5 V; V
DS
DS
G2-S
DS
DS
4
= 0; I
= 0; I
= 0; I
= 0; I
G2-S
G1-S
DS
DS
G2-S
G1-S
= 0; I
CONDITIONS
G1-S
G2-S
= 4 V; I
= 4 V; I
= 5 V; R
= 5 V; R
S-G1
S-G2
= V
= V
D
= 10 mA
= 10 mA
= 10 A
DS
DS
= 10 mA
= 10 mA
D
D
= 0
= 0
G
G
= 100 A
= 100 A
= 62 k note 1
= 120 k note 1
10
6
6
0.5
0.5
0.3
0.3
11
8


MIN.
Product specification

10
10
1.5
1.5
1
1.2
19
16
50
20
MAX.
BF1203
V
V
V
V
V
V
V
mA
mA
nA
nA
UNIT